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參數(shù)資料
| 型號： | CEB81A3 |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 52K |
| 代理商： | CEB81A3 |
30
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 100A , R
DS(ON)
= 4.5m
R
DS(ON)
= 6.0m
@V
GS
=10V.
@V
GS
=4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
-Pulsed
I
D
100
A
I
DM
300
A
Drain-Source Diode Forward Current
I
S
100
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
1.4
62.5
/W
C
/W
C
@Tc=25 C
Derate above 25 C
107
0.71
Drain Current-Continuous
S
G
D
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
G
S
S
D
D
G
4-132
CEP81A3/CEB81A3
PRELIMINARY
4
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