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參數(shù)資料
| 型號(hào)： | CEB8030LA |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 53K |
| 代理商： | CEB8030LA |
with Temperature
with Temperature
I
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
I
D
,
4-125
CEP8030LA/CEB8030LA
V
G
Tj, Junction Temperature ( C)
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
Figure 6. Breakdown Voltage Variation
B
D
,
D
Tj, Junction Temperature ( C)
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
Figure 5. Gate Threshold Variation
g
F
,
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
100
80
60
40
20
0
0
20
40
60
80
V
DS
=10V
V
G
,
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
10
0
2
4
6
8
0
20
40
60
80
V
DS
=15V
I
D
=40A
50
10
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
10
10
-1
10
10
2
1
0
10
-1
10
1
10
2
10
0
T
C
=25 C
Tj=175 C
Single Pulse
RDSON Lmt
DC
100ms
10ms
1ms
100
s
4
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