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參數(shù)資料
| 型號： | CEB8030LA |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | CEB8030LA |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
μ
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 37.5A
6.5
m
m
V
GS
= 4.5V, I
D
= 30A
9
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
75
40
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=26A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
2447
P
F
P
F
P
F
187
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall Time
50
ns
ns
ns
ns
100
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
nC
nC
nC
5.5
7.5
983
35
45
11
16
V
DS
=15V, I
D
=40A
V
GS
=5V
V
DD
= 15V,
I
D
=60A,
R
GEN
= 6
V
GS
=10V
25
21
58
13
CEP8030LA/CEB8030LA
4-123
45
33
4
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