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參數(shù)資料
| 型號(hào)： | CEB05P03 |
| 英文描述： | -30V P Channel MOS |
| 中文描述： | - 30V的P通道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 40K |
| 代理商： | CEB05P03 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=-250
μ
A
-30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-30V, V
GS
=0V
-1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
= -250
μ
A
-1
-1.5
-3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=-10V, I
D
=-4.9A
42
70
m
V
GS
=-4.5V, I
D
=-2.0A
78
120
m
On-State Drain Current
I
D(ON)
g
V
DS
=-5V, V
GS
=-10V
-20
A
5
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=-15V, I
D
=-4.9A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
1040
P
F
420
P
F
P
F
150
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
= -15V,
I
D
= -1A,
V
GEN
= -10V,
R
GEN
=6
8
15
ns
ns
ns
ns
11
20
23
40
14
25
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= -15V, I
D
= -4.9A,
V
GS
= -10V
22.5
29
nC
nC
nC
2
6
4-13
4
CEP05P03/CEB05P03
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