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參數(shù)資料
| 型號(hào)： | CD4006BMS |
| 廠商： | Intersil Corporation |
| 英文描述： | CMOS 18-Stage Static Register(CMOS 18級(jí) 靜態(tài)寄存器) |
| 中文描述： | 的CMOS 18級(jí)靜態(tài)注冊(cè)的CMOS（18級(jí)靜態(tài)寄存器） |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | CD4006BMS |
7-662
Specifications CD4006BMS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
±
-0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1
Note 1
2, 8 - 13
1, 3 - 7
14
Static Burn-In 2
Note 1
2, 8 - 13
7
1, 3 - 6, 14
Dynamic Burn-
In Note 1
2
7
14
8 - 13
3
1, 4 - 6
Irradiation
Note 2
2, 8 - 13
7
1, 3 - 6, 14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K
±
5%, VDD = 18V
±
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
±
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V
±
0.5V
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