參數(shù)資料
型號: CB55000
英文描述: HCMOS7 STANDARD CELLS
中文描述: HCMOS7標(biāo)準(zhǔn)單元
文件頁數(shù): 3/15頁
文件大?。?/td> 2533K
代理商: CB55000
3/15
CB55000 Series
1
The CB55000 standard cell series uses a high performance, low-voltage, 0.25
μ
m drawn (0.20
μ
m effective),
six metal levels CMOS process HCMOS7 to a 90 pico-second internal delay while offering very low power dis-
sipation and high noise immunity.
With an average routed gate density of 30,000 gates/mm
2
, the CB55000 family allows the integration of up to
15 million equivalent gates and is ideal for high-complexity or high-performance devices for computer, telecom-
munication and consumer products.
With a typical gate delay of 70 ps (for a 2-input NAND gate at fan-out 1), the library meets the most demanding
speed requirements in telecommunication and computer application designs today.
Optimized for 2.5 V operation, the library features a power consumption of less than 70 nW/Gate/MHz (fan-
out=1) and 30 nW/Gate/MHz (fan-out=1) at 1.8 V.
The I/O buffers can be fully configured for both 2.5 V and 3.3 V interface options, with several high speed buffer
types available. These include: low voltage differential (LVDS) I/Os, PCI/AGP, PECLs, and HSTL.
The pad pitch down to 50
μ
m, in a staggered arrangement, meets the requirements of high pin-count devices
which tend to become pad-limited at such library densities. For very high pin-count ICs, advanced packaging
solutions such as Chip Scale Packaging in fine pitch BGA are available.
New packaging solutions using a flip-chip approach are currently being developed.
GENERAL DESCRIPTION
Figure 2. HCMOS7 Front end cross section
MOS gate length: 0.25
μ
m, Shallow Trench Isolation, M1: Tungsten
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