參數(shù)資料
型號: BYQ30E-200
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYQ30E-200<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁數(shù): 5/11頁
文件大小: 246K
代理商: BYQ30E-200
BYQ30E-200
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2010
5 of 11
NXP Semiconductors
BYQ30E-200
Dual ultrafast power diode
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
F
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
I
F
= 16 A; T
j
= 25 °C; see
Figure 4
I
F
= 16 A; T
j
= 150 °C; see
Figure 4
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
V
R
= 200 V; T
j
= 100 °C
V
R
= 200 V; T
j
= 25 °C
-
-
-
-
-
1.12
1
0.84
0.3
4
1.25
1.15
0.95
0.6
30
V
V
V
mA
μA
I
R
reverse current
Dynamic characteristics
Q
r
recovered charge
I
F
= 2 A; V
R
30 V; dI
F
/dt = 20 A/s;
T
j
= 25 °C; see
Figure 5
I
F
= 1 A; V
R
30 V; dI
F
/dt = 100 A/μs;
ramp recovery; T
j
= 25 °C;see
Figure 5
I
F
= 0.5 A; I
R
= 1 A; step recovery;
I
R(meas)
= 0.25 A; T
j
= 25 °C;
see
Figure 6
I
F
= 1 A; dI
F
/dt = 10 A/μs; T
j
= 25 °C;
see
Figure 7
-
4
11
nC
t
rr
reverse recovery time
-
20
25
ns
-
12
22
ns
V
FR
forward recovery
voltage
-
1
-
V
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 4.
Forward current as a function of forward
voltage
Fig 5.
Forward recovery definitions
V
F
(V)
0
2
1.5
0.5
1
003aae841
10
5
15
20
I
F
(A)
0
(1)
(3)
(2)
001aab911
t
rr
time
100 %
10 %
I
F
dl
F
dt
I
R
I
RM
Q
r
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