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參數(shù)資料
| 型號： | BYQ30E-200 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual ultrafast power diode |
| 封裝： | BYQ30E-200<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 246K |
| 代理商： | BYQ30E-200 |
BYQ30E-200
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2010
3 of 11
NXP Semiconductors
BYQ30E-200
Dual ultrafast power diode
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
Conditions
Min
-
-
-
-
Max
200
200
200
16
Unit
V
V
V
A
DC
squire-wave pulse;
δ
= 0.5 ;
T
mb
≤
104 °C; both diodes conducting;
see
Figure 1
;
see
Figure 2
squire-wave pulse;
δ
= 0.5 ; t
p
= 25 μs;
T
mb
≤
104 °C; per diode
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; per diode
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; per diode
δ
= 0.001 ; t
p
= 2
μ
s
t
p
= 100
μ
s
I
FRM
repetitive peak forward current
-
16
A
I
FSM
non-repetitive peak forward
current
-
80
A
-
88
A
I
RRM
I
RSM
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
-
-
0.2
0.2
A
A
T
stg
T
j
V
ESD
-40
150
°C
junction temperature
electrostatic discharge voltage
-
-
150
8
°C
kV
HBM; all pins; C = 250 pF; R = 1.5 k
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aae838
I
F(AV)
(A)
0
12
8
4
4
8
12
P
tot
(W)
0
δ
= 1.0
0.2
0.1
0.5
I
F(AV)
(A)
0
8
6
2
4
003aae839
4
8
12
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4
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|---|---|
| BYQ30E-200,127 | 功能描述:整流器 RAIL REC-EPI RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| byq30e-200127 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BYQ30EB | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged |
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