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參數資料
| 型號： | BUW13AW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, TO-247, 3 PIN |
| 文件頁數： | 8/12頁 |
| 文件大?。?/td> | 79K |
| 代理商： | BUW13AW |
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
Fig.9
Collector-emitter saturation voltage as a
function of base current.
(1) I
C
= 5 A.
(2) I
C
= 10 A.
(3) I
C
= 15 A.
T
j
= 25
°
C; solid line: typical values; dotted line: maximum values.
handbook, halfpage
10
2
10
1
10
1
1
1
VCEsat
(V)
IB (A)
10
MGB871
(1)
(2)
(3)
Fig.10 DC current gain; typical values.
handbook, halfpage
MBC096
2
10
2
10
1
1
10
10
2
10
1
IC (A)
hFE
VCE = 5 V
1V
Fig.11 Test circuit resistive load.
V
CC
= 250 V; t
p
= 20
μ
s; V
IM
=
6 to +8 V; t
p
/T = 0.01.
The values of R
B
and R
L
are selected in accordance with I
Con
and
I
Bon
requirements.
handbook, halfpage
MGE244
VCC
D.U.T.
RL
RB
VIM
tp
T
0
Fig.12 Switching time waveforms with
resistive load.
handbook, halfpage
MBB730
t
90%
10%
IB
IB on
IC on
ton
ts
tf
tr
toff
IB off
IC
90%
10%
t
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相關代理商/技術參數 |
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| BUW13F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
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| BUW14 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUW19 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30A I(C) |
| BUW22 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
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