參數(shù)資料
型號: BUW13AW
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, TO-247, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 79K
代理商: BUW13AW
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
Fig.2 Forward bias SOAR.
T
mb
25
°
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
100
and t
p
0.6
μ
s.
IV - Repetitive pulse operation in this region is permissible provided V
BE
0 and t
p
5 ms.
(1) P
tot max
line.
(2) Second breakdown limits.
handbook, full pagewidth
MGB926
1
10
1
10
2
10
3
10
4
I
VCE (V)
10
10
1
10
3
10
2
10
2
10
3
IC
(A)
ICM max
IC max
BUW13W
BUW13AW
II
III
IV
(1)
(2)
DC
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