- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376498 > BUW11AF (NXP SEMICONDUCTORS) Silicon diffused power transistors PDF資料下載
參數(shù)資料
| 型號(hào)： | BUW11AF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 88K |
| 代理商： | BUW11AF |
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
Fig.7 DC current gain; typical values.
T
j
= 125
°
C.
handbook, halfpage
MBC095
IC (A)
10
2
10
1
1
10
10
2
10
hFE
1
1V
VCE = 5 V
Fig.8 Test circuit resistive load.
V
CC
= 250 V; t
p
= 20
μ
s; V
IM
=
6 to +8 V; t
p
/T = 0.01.
The values of R
B
and R
L
are selected in accordance with I
Con
and
I
Bon
requirements.
handbook, halfpage
MGE244
VCC
D.U.T.
RL
RB
VIM
tp
T
0
Fig.9
Switching time waveforms with
resistive load.
t
r
≤
20 ns.
handbook, halfpage
MBB731
t
90%
10%
90%
10%
IC
IB
IB on
IB off
IC on
tr
≤
30 ns
ts
tf
ton
t
Fig.10 Test circuit inductive load and reverse
bias SOAR.
V
CL
= up to 1000 V; V
CC
= 30 V; V
BE
=
1 V to
5 V; L
B
= 1
μ
H;
L
C
= 200
μ
H.
andbook, halfpage
MGE246
+
IB
VBE
LB
LC
VCC
D.U.T.
VCL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUW11F | Silicon diffused power transistors |
| BUW11AW | Silicon diffused power transistors |
| BUW11W | Silicon diffused power transistors |
| BUW12AF | Silicon diffused power transistors |
| BUW12F | Silicon diffused power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUW11AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BUW11AW/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR |
| BUW11F | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUW11W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BUW12 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。