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參數(shù)資料
| 型號： | BUW11AF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 88K |
| 代理商： | BUW11AF |
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
V
CEOsust
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
collector-emitter sustaining voltage
BUW11F
BUW11AF
collector-emitter saturation voltage
BUW11F
BUW11AF
base-emitter saturation voltage
BUW11F
BUW11AF
collector saturation current
BUW11F
BUW11AF
collector-emitter cut-off current
I
C
= 100 mA; I
Boff
= 0; L = 25 mH;
see Figs 5 and 6
400
450
V
V
V
CEsat
I
C
= 3 A; I
B
= 600 mA
I
C
= 2.5 A; I
B
= 500 mA
1.5
1.5
V
V
V
BEsat
I
C
= 3 A; I
B
= 600 mA
I
C
= 2.5 A; I
B
= 500 mA
V
CE
= 1.5 V
1.4
1.4
V
V
I
Csat
3
2.5
1
2
A
A
mA
mA
I
CES
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 mA; see Fig.7
V
CE
= 5 V; I
C
= 0.5 A; see Fig.7
I
EBO
h
FE
emitter-base cut-off current
DC current gain
10
10
18
20
10
35
35
mA
Switching times resistive load
(Figs 8 and 9)
t
on
turn-on time
BUW11F
BUW11AF
t
s
storage time
BUW11F
BUW11AF
t
f
fall time
BUW11F
BUW11AF
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
1
1
μ
s
μ
s
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
4
4
μ
s
μ
s
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
0.8
0.8
μ
s
μ
s
Switching times inductive load
(Figs 10 and 11)
t
s
storage time
BUW11F
I
Con
= 3 A; I
B
= 600 mA;
V
CL
= 250 V; T
c
= 100
°
C
I
Con
= 2.5 A; I
B
= 500 mA;
V
CL
= 300 V; T
c
= 100
°
C
2
2.5
μ
s
BUW11AF
2
2.5
μ
s
t
f
fall time
BUW11F
I
Con
= 3 A; I
B
= 600 mA;
V
CL
= 250 V; T
c
= 100
°
C
I
Con
= 2.5 A; I
B
= 500 mA;
V
CL
= 300 V; T
c
= 100
°
C
200
300
ns
BUW11AF
200
300
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUW11F | Silicon diffused power transistors |
| BUW11AW | Silicon diffused power transistors |
| BUW11W | Silicon diffused power transistors |
| BUW12AF | Silicon diffused power transistors |
| BUW12F | Silicon diffused power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUW11AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BUW11AW/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR |
| BUW11F | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUW11W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BUW12 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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