- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄376498 > BUW11AF (NXP SEMICONDUCTORS) Silicon diffused power transistors PDF資料下載
參數(shù)資料
| 型號(hào)： | BUW11AF |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 88K |
| 代理商： | BUW11AF |
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
THERMAL CHARACTERISTICS
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
3.95
3.05
35
K/W
K/W
K/W
note 2
R
th j-a
thermal resistance from junction to ambient
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUW11F
BUW11AF
collector-emitter voltage
BUW11F
BUW11AF
collector saturation current
BUW11F
BUW11AF
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
V
BE
= 0
850
1000
V
V
V
CEO
open base
400
450
V
V
I
Csat
65
3
2.5
5
10
2
4
32
41
+150
150
A
A
A
A
A
A
W
W
°
C
°
C
I
C
I
CM
I
B
I
BM
P
tot
see Figs 2 and 4
t
p
< 20 ms; see Fig.2
t
p
< 20 ms
T
h
≤
25
°
C; see Fig.3; note 1
T
h
≤
25
°
C; see Fig.3; note 2
T
stg
T
j
storage temperature
junction temperature
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
isolM
C
isol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
1500
21
V
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUW11F | Silicon diffused power transistors |
| BUW11AW | Silicon diffused power transistors |
| BUW11W | Silicon diffused power transistors |
| BUW12AF | Silicon diffused power transistors |
| BUW12F | Silicon diffused power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUW11AW | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BUW11AW/B | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR |
| BUW11F | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUW11W | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BUW12 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。