- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381617 > BUL791 (Transys Electronics Ltd.) NPN SILICON POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | BUL791 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | NPN SILICON POWER TRANSISTOR |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 114K |
| 代理商： | BUL791 |
BUL791
NPN SILICON POWER TRANSISTOR
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JULY 1991 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed Specifically for High Frequency
Electronic Ballasts up to 125 W
G
h
FE
6 to 22 at V
CE
= 1 V, I
C
= 2 A
G
Low Power Losses (On-state and Switching)
G
Key Parameters Characterised at High
Temperature
G
Tight and Reproducible Parametric
Distributions
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
= 10 ms, duty cycle
≤
2%.
2. This value applies for t
p
= 300 μs, duty cycle
≤
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
V
CES
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
CM
I
B
I
BM
P
tot
T
j
T
stg
700
700
400
9
4
8
14
2.5
3.5
75
V
V
V
V
A
A
A
A
A
W
°C
°C
-65 to +150
-65 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BULD125KC | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD125KC | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD25 | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD25D | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD25DR | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL804 | 功能描述:兩極晶體管 - BJT Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL804_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN Power Transistor |
| BUL805 | 功能描述:兩極晶體管 - BJT Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL805_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor |
| BUL810 | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。