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參數(shù)資料
| 型號： | BULD25D |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| 中文描述： | NPN硅晶體管，二極管集成 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 277K |
| 代理商： | BULD25D |
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JULY 1994 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed Specifically for High Frequency
Electronic Ballasts
G
Integrated Fast t
rr
Anti-parallel Diode,
Enhancing Reliability
G
Diode t
rr
Typically 500 ns
G
New Ultra Low-Height SOIC Power Package
G
Tightly Controlled Transistor Storage Times
G
Voltage Matched Integrated Transistor and
Diode
G
Characteristics Optimised for Cool Running
G
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
G
Custom Switching Selections Available
G
Surface Mount and Through-Hole Options
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast t
rr
anti-parallel diode. The revolutionary design ensures that the diode
has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel
diode plus transistor.
PACKAGE
Small-outline
Small-outline taped
and reeled
Single-in-line
PART # SUFFIX
D
DR
SL
The integrated diode has minimal charge coupling with the transistor, increasing frequency stability,
especially in lower power circuits where the circulating currents are low. By design, this new device offers a
voltage matched integrated transistor and anti-parallel diode.
This device is available in the now well established 8 pin low height surface mount D package, and the TO-
220 pin compatible SL package. Use of the SL package allows for a 40% height saving, making it ideal for
compact ballast applications.
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
V
CES
V
CBO
V
CEO
V
EBO
600
600
400
9
V
V
V
V
B
C
E
D PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
C
C
C
C
NC
B
E
NC
NC - No internal connection
1
2
3
B
C
E
SL PACKAGE
(TOP VIEW)
device symbol
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BULD25DR | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD25SL | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD50 | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD50KC | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD50SL | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BULD25DR | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD25SL | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD26 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| BULD26-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 4A I(C) | TO-251 |
| BULD38 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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