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參數(shù)資料
| 型號： | BULD125KC |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| 中文描述： | NPN硅晶體管，二極管集成 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 167K |
| 代理商： | BULD125KC |
BULD125KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MAY 1994 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed Specifically for High Frequency
Electronic Ballasts
G
Integrated Fast t
rr
Anti-Parallel Diode,
Enhancing Reliability
G
Diode t
rr
Typically 1 μs
G
Tightly Controlled Transistor Storage Times
G
Voltage Matched Integrated Transistor and
Diode
G
Characteristics Optimised for Cool Running
G
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast t
rr
anti-
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
device symbol
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
B
C
E
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE
1: This value applies for t
p
=
10 ms, duty cycle
≤
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Maximum average continuous diode forward current at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
V
CES
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
I
E(av)
T
j
T
stg
600
600
400
9
8
12
4
6
85
0.5
V
V
V
V
A
A
A
A
W
A
°C
°C
-65 to +150
-65 to +150
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