參數(shù)資料
型號: BUL1102E
廠商: 意法半導體
英文描述: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述: 高壓快速開關(guān)NPN電源晶體管
文件頁數(shù): 2/6頁
文件大小: 209K
代理商: BUL1102E
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
1.78
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
B
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
V
CE
= 1100 V
100
I
EBO
V
EB
= 12 V
1
mA
I
C
= 100 mA
450
V
I
C
= 2 A I
B
= 400 mA
1.5
V
I
C
= 2 A I
B
= 400 mA
1.5
V
I
C
= 250 mA V
CE
= 5 V
I
C
= 2 A V
CE
= 5 V
35
12
70
20
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 2.5 A V
CC
= 250 V
I
B1
= 0.5 A I
B2
= 1 A
T
P
= 30
μ
s (see figure 2)
L = 2 mH C = 1.8 nF
I
BR
2.5A 25
o
C < T
C
<125
o
C
(see figure 1)
2.5
300
μ
s
ns
E
ar
Avalanche Energy
6
mJ
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL1102E
2/6
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