- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382872 > BUL1102E (意法半導(dǎo)體) HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | BUL1102E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 209K |
| 代理商： | BUL1102E |
BUL1102E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
HIGH VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
APPLICATIONS
I
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
INTERNAL SCHEMATIC DIAGRAM
March 2003
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
1100
450
12
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
TO-220
1/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUL1203 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL1203E | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL128FP | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL128 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL128D-B | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL1102EFP | 功能描述:TRANS NPN 450V 4A TO-220FP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| BUL116 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL116D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL118 | 制造商:STMicroelectronics 功能描述: |
| BUL118D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。