參數(shù)資料
型號(hào): BUL128D-B
廠商: 意法半導(dǎo)體
英文描述: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述: 高壓快速開關(guān)NPN電源晶體管
文件頁數(shù): 1/7頁
文件大?。?/td> 79K
代理商: BUL128D-B
BUL128
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
SGS-THOMSON PREFERRED SALESTYPE
I
NPN TRANSISTOR
I
HIGH VOLTAGECAPABILITY
I
LOW SPREADOF DYNAMIC PARAMETERS
I
MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
I
VERYHIGH SWITCHING SPEED
APPLICATIONS:
I
ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi
Epitaxial
Planar
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
technology
for
high
INTERNAL SCHEMATIC DIAGRAM
February 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
700
400
9
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
1
2
3
TO-220
1/7
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