參數(shù)資料
型號(hào)： BUK9509-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS logic level FET
中文描述： 75 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 5/14頁(yè)
文件大?。?/td> 313K
代理商： BUK9509-55A
Philips Semiconductors
BUK95/9609-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 21 February 2002
5 of 14
9397 750 09229
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
55
50
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 4.5 V; I
D
= 25 A
V
GS
= 10 V; I
D
= 25 A
1
0.5
-
1.5
-
-
2
-
2.3
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
-
-
-
-
7.6
-
-
6.4
9
18
10
8
m
m
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-to-source charge
Q
gd
gate-to-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 5 V; V
DD
= 44 V;
I
D
= 25 A;
Figure 14
-
-
-
-
-
-
-
-
-
-
-
60
9
29
3475
570
360
33
149
197
131
4.5
-
-
-
4633
682
493
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 5 V; R
G
= 10
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
-
3.5
-
nH
-
2.5
-
nH
L
s
internal source inductance
-
7.5
-
nH
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK9509-55A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9509-75A 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9509-75A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9510-100B 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9510-100B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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