參數(shù)資料
型號: BUK9508-55A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS logic level FET
中文描述: 75 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 12/14頁
文件大?。?/td> 328K
代理商: BUK9508-55A
Philips Semiconductors
BUK95/9608-55A
TrenchMOS logic level FET
Product data
Rev. 03 — 6 May 2002
12 of 14
9397 750 09573
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
11. Revision history
Table 6:
Rev Date
03
Revision history
CPCN
20020506
Description
Product data (9397 750 09573); supersedes Product data of BUK9508_9608-55A_2 of 4
of September 2000.
Modifications:
The format of this specification has been redesigned to comply with Philips
Semiconductors’ new presentation and information standard.
Thermal resistance figure lowered (j-mb)
Section 7
. This has a knock on effect on the
devices current and power handling capabilities (See
Section 5
and
Section 6
).
Maximum gate-source voltage increased from
±
10 to
±
15 V (
Section 6
).
Switching speeds re-measured in dynamic characteristics
Section 8
.
-
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相關代理商/技術參數(shù)
參數(shù)描述
BUK9508-55A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9508-55B 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9508-55B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9509-40B 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9509-40B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube