參數(shù)資料
型號: BUK856-400IZ
廠商: NXP SEMICONDUCTORS
元件分類: IGBT 晶體管
英文描述: Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
中文描述: 20 A, N-CHANNEL IGBT, TO-220AB
文件頁數(shù): 6/8頁
文件大?。?/td> 81K
代理商: BUK856-400IZ
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
BUK856-400 IZ
Fig.19. Typical Turn-off dV
/dt vs. R
conditions: T
j
=125 C; I
C
=8 A; V
CL
=300 V; L
C
=5 mH.
Fig.20. Test circuit for inductive load switching times
Fig.21. Definitions of inductive load switching times
Fig.22. Reverse Breakdown Voltage
V
(BR)ECS
= f(T
j
); conditions: I
EC
= 50 mA
Fig.23. Test circuit for clamped turn-off energy test
Fig.24. Definition of clamping energy E
CER
0
2
Rg / kOhm
4
dVce/dt (V/us)
PMG35A
150
100
50
0
1
3
5
0
100
Tj / degC
V(BR)ECS / V
BUK856-400IZ
35
30
25
20
min.
typ.
-50
50
150
: adjust for correct Ic
Vcc
V
Lc
D.U.T.
R
0V
tp
0R1
G
VGE
IC measure
CL
: adjust for correct Ic
Vcc
Lc
D.U.T.
R
0V
tp
0R1
G
V
IC measure
GE
GE
C
CE
t
t
td(off)
tf
tc
10%
90%
10%
90%
V
V
I
t
t
V(cl)cer
I
Vce
Vge
V
Ecer
Ic
Vce x Ic
P
t
December 1996
6
Rev. 1.200
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