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參數(shù)資料
| 型號(hào)： | BUK856-400IZ |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
| 中文描述： | 20 A, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | BUK856-400IZ |
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
BUK856-400 IZ
Fig.1. Transient thermal impedance
Z
th j-mb
= f(t) ; parameter D = t
p
/T
Fig.2. Turn-off Safe Operating Area
conditions: T
j
≤
T
jmax.
; R
G
≥
1 k
Fig.3. Typical On-state Voltage
V
CEsat
= f(I
C
); parameter T
j
; conditions: V
GE
= 3.5 V
Fig.4. Normalised power dissipation.
PD% = 100.P
D
/P
D 25C
= f(T
mb
)
Fig.5. Derating of I
CLM
with turn-off dV
CE
/dt
conditions: V
CE
500 V; T
j
≤
T
jmax.
Fig.6. Typical On-state Voltage
V
CEsat
= f(I
C
); parameter T
j
; conditions: V
GE
= 5 V
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth(j-mb) / (K/W)
1E+01
1E+00
1E-01
1E-02
1E-03
0
0.5
0.2
0.1
0.05
0.02
D =
tp
tp
T
T
P
D
t
D=
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
200
400
600
VCE / V
IC / A
BUK8Y6-400IZ
10
1
0.1
Self-clamped
CLM
I
0
50
100
150
200
dVCE/dt (V/us)
ICLM / A
BUK8Y6-400IZ
15
10
5
0
0
4
8
12
IC / A
16
20
24
VCE / V
PMG35A
3
2
1
0
Tj / C =
150
25
-40
0
4
8
12
IC / A
16
20
24
VCE / V
PMG35A
2
1.5
1
0.5
0
Tj / C =
150
25
-40
December 1996
3
Rev. 1.200
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