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參數(shù)資料
| 型號： | BUK856-400IZ |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
| 中文描述： | 20 A, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BUK856-400IZ |
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
BUK856-400 IZ
Fig.13. Sub-threshold collector current
I
C
= f(V
GE
); T
j
= 25C; V
CE
= V
GE
Fig.14. Typical Turn-on Gate Charge Characteristics
V
GE
= f(Q
G
); conditions: I
C
= 8 A.
Fig.15. Typical Capacitances C
, C
, C
C = f(V
CE
); conditions: V
GE
= 0 V; f = 1 MHz
Fig.16. Typical Switching Characteristics vs. R
conditions: T
j
=125 C; I
C
=8 A; V
CL
=300 V; L
C
=5 mH.
Fig.17. Typical Switching Characteristics vs. T
conditions: I
C
=8 A; V
CL
=300 V; R
G
=1 k
; L
C
=5 mH.
Fig.18. Typical Switching Characteristics vs. I
conditions: T
j
=125 C V
CL
=300 V; R
G
=1 k
; L
C
=5 mH.
0
0.4
0.8
1.2
1.6
2
2.4
VGE / V
IC / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
2 %
typ
98 %
0
2
Rg / kOhm
4
t / us, E / mJ
PMG35A
100
10
1
1
3
5
td(off)
E(off)
tf
0
10
20
30
Qg / nC
VGE / V
PMG35A
6
5
4
3
2
1
0
300
Vcc / V = 12
0
100
Tj / C
t / us, E / mJ
PMG35A
15
10
5
0
50
150
td(off)
E(off)
tf
0.01
1
100
VCE / V
C / pf
pmg35a
10000
1000
100
10
0.1
10
1000
Cies
Coes
Cres
0
2
4
6
8
10
IC / A
t / us, E / mJ
PMG35A
15
10
5
0
td(off)
E(off)
tf
December 1996
5
Rev. 1.200
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