參數(shù)資料
型號： BUK7735-55A
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-220F
中文描述： 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 20A條（丁）|至220F
文件頁數(shù)： 5/13頁
文件大小： 297K
代理商： BUK7735-55A
Philips Semiconductors
BUK7728-55A
TrenchMOS standard level FET
Product specification
Rev. 01 — 13 February 2001
5 of 13
9397 750 08001
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 15 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
55
50
V
V
V
GS(th)
gate-source threshold voltage
2
1
3
4
4.4
V
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
23
28
51
m
m
Dynamic characteristics
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 12
860
220
140
14
68
83
43
4.5
1165 pF
262
190
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
L
= 1.2
; V
GS
= 10 V; R
G
= 10
measured from drain lead from package to
centre of die
measured from source lead from package to
source bond pad
L
s
internal source inductance
7.5
nH
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