參數(shù)資料
型號(hào): BUK7728-55A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 22A I(D) | TO-220F
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直| 22A條(?。﹟至220F
文件頁數(shù): 3/13頁
文件大?。?/td> 297K
代理商: BUK7728-55A
Philips Semiconductors
BUK7728-55A
TrenchMOS standard level FET
Product specification
Rev. 01 — 13 February 2001
3 of 13
9397 750 08001
Philips Electronics N.V. 2001. All rights reserved.
V
GS
4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03ne36
0
20
40
60
80
100
120
Pder
(%)
0
25
50
75
100
125
150
175
Tmb (oC)
03ne37
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Ider
(%)
Tmb (oC)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ne06
10-1
1
10
102
103
1
10
102
VDS (V)
ID
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 us
100 us
tp
tp
T
T
P
t
δ
=
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