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參數(shù)資料
| 型號(hào)： | BUK7621-30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 50 A, 30 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | BUK7621-30 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7621-30
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 25 A; V
≤
25 V;
V
GS
= 10 V; R
GS
= 50
; T
mb
= 25 C
MIN.
-
TYP.
-
MAX.
70
UNIT
mJ
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
1
10
100
1000
PHP50N03T
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
RDS(ON) = VDS/ID
tp =
10 us
100 us
1 ms
10 ms
DC
Tmb = 25 C
0
20
40
60
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1us
0.2
0.1
0.05
0.02
0.5
PHP50N03T
10us 100us
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
D =
July 1997
3
Rev 1.000
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| BUK7623-75A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
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| BUK7623-75A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7624-55 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
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