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參數(shù)資料
| 型號(hào)： | BUK76150-55A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 11A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 11A條（?。﹟對(duì)263AB |
| 文件頁數(shù)： | 5/15頁 |
| 文件大小： | 302K |
| 代理商： | BUK76150-55A |
Philips Semiconductors
BUK75150-55A; BUK76150-55A
TrenchMOS standard level FET
Product specification
Rev. 01 — 10 November 2000
5 of 15
9397 750 07647
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
55
50
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 5.5 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
2
1
3
4
4.4
V
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
128
150
300
m
m
Dynamic characteristics
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
171
54
37
3
26
8
10
4.5
227
64
54
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
L
= 2.7
;
V
GS
= 10 V; R
G
= 5.6
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
3.5
nH
2.5
nH
L
s
internal source inductance
7.5
nH
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