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參數(shù)資料
| 型號： | BUK76150-55A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 11A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 11A條（丁）|對263AB |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 302K |
| 代理商： | BUK76150-55A |
Philips Semiconductors
BUK75150-55A; BUK76150-55A
TrenchMOS standard level FET
Product specification
Rev. 01 — 10 November 2000
2 of 15
9397 750 07647
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
Max
55
11
36.6
175
Unit
V
A
W
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
V
GS
= 10 V; I
D
= 5.5 A
T
j
= 25
°
C
T
j
= 175
°
C
128
150
300
m
m
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
Max
55
55
±
20
11
Unit
V
V
V
A
R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
7.8
44
A
A
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
I
DRM
pulsed reverse drain current
Avalanche ruggedness
W
DSS
non-repetitive avalanche energy
total power dissipation
storage temperature
operating junction temperature
55
55
36.6
+175
+175
W
°
C
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
11
44
A
A
unclamped inductive load; I
D
= 8 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
;
starting T
mb
= 25
°
C
6.4
mJ
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