參數資料
型號: BUK663R5-55C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 120 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數: 5/14頁
文件大?。?/td> 219K
代理商: BUK663R5-55C
BUK663R5-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 December 2010
5 of 14
NXP Semiconductors
BUK663R5-55C
N-channel TrenchMOS intermediate level FET
5.
Thermal characteristics
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aae386
10
1
1
10
10
2
10
3
10
1
1
10
10
2
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100 ms
10 ms
1 ms
100
μ
s
t
p
=10
μ
s
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see
Figure 5
Min
-
Typ
-
Max
0.57
Unit
K/W
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
003aae387
single shot
δ
= 0.5
0.2
0.1
0.05
0.02
10
3
10
2
10
1
1
10
5
10
4
10
3
10
2
10
1
1
t
p
(s)
(K/W)
10
6
t
p
t
p
T
T
P
t
δ
=
Z
th(j-mb)
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