參數(shù)資料
型號: BUK663R5-55C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 120 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 4/14頁
文件大?。?/td> 219K
代理商: BUK663R5-55C
BUK663R5-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 December 2010
4 of 14
NXP Semiconductors
BUK663R5-55C
N-channel TrenchMOS intermediate level FET
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
Fig 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
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003aae402
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BUK663R7-75C,118 功能描述:MOSFET N-CHAN 75V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R4-55C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V97ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,97A,SOT404 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) D2PAK
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