參數(shù)資料
型號： BUK663R5-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 30 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 7/14頁
文件大?。?/td> 201K
代理商： BUK663R5-30C
BUK663R5-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2010
7 of 14
NXP Semiconductors
BUK663R5-30C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= 0 V; V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
46
57
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 6.
Forward transconductance as a function of
drain current; typical values
Fig 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae307
0
20
40
60
80
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae308
0
25
50
75
100
125
g
fs
(S)
0
25
50
75
100
I
D
(A)
003aae312
0
3
6
9
12
15
0
4
8
12
16
V
GS
(V)
R
DSon
(m
Ω
)
003aae306
0
20
40
60
80
100
I
D
(A)
0
0.5
1
1.5
2
V
DS
(V)
3.8
4.0
4.5
5
6
3.3
10
V
GS
(V) = 3.2
3.4
3.6
相關PDF資料
PDF描述
BUK663R5-55C N-channel TrenchMOS intermediate level FET
BUK663R7-75C N-channel TrenchMOS FET
BUK664R4-55C N-channel TrenchMOS intermediate level FET
BUK664R6-40C N-channel TrenchMOS intermediate level FET
BUK664R8-75C N-channel TrenchMOS FET
相關代理商/技術參數(shù)
參數(shù)描述
BUK663R5-30C,118 功能描述:MOSFET N-CHAN 30V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK663R5-55C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:55V; On Resistance Rds(on):2.86mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK
BUK663R5-55C,118 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK663R7-75C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK
BUK663R7-75C,118 功能描述:MOSFET N-CHAN 75V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*