參數(shù)資料
型號： BUK663R5-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 30 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 2/14頁
文件大?。?/td> 201K
代理商： BUK663R5-30C
BUK663R5-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2010
2 of 14
NXP Semiconductors
BUK663R5-30C
N-channel TrenchMOS intermediate level FET
[1]
Continuous current is limited by package.
2.
Pinning information
3.
Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 100 A; V
sup
≤
30 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
242
mJ
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 24 V;
V
GS
= 10 V; see
Figure 13
;
see
Figure 14
-
20
-
nC
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
G
gate
D
Drain
S
source
D
mounting base; connected to
drain
Simplified outline
Graphic symbol
SOT404 (D2PAK)
mb
1
3
2
S
D
G
mbb076
Table 3.
Type number
Ordering information
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
Version
SOT404
BUK663R5-30C
相關(guān)PDF資料
PDF描述
BUK663R5-55C N-channel TrenchMOS intermediate level FET
BUK663R7-75C N-channel TrenchMOS FET
BUK664R4-55C N-channel TrenchMOS intermediate level FET
BUK664R6-40C N-channel TrenchMOS intermediate level FET
BUK664R8-75C N-channel TrenchMOS FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK663R5-30C,118 功能描述:MOSFET N-CHAN 30V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK663R5-55C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:55V; On Resistance Rds(on):2.86mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK
BUK663R5-55C,118 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK663R7-75C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK
BUK663R7-75C,118 功能描述:MOSFET N-CHAN 75V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*