參數(shù)資料
型號(hào)： BUK663R2-40C
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 40 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 6/14頁(yè)
文件大小： 374K
代理商： BUK663R2-40C
BUK663R2-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 14 October 2010
6 of 14
NXP Semiconductors
BUK663R2-40C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
40
-
-
V
36
-
-
V
V
GS(th)
gate-source threshold
voltage
1.8
2.3
2.8
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
-
-
3.3
V
I
D
= 2.5 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
0.8
-
-
V
I
DSS
drain leakage current
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
-
-
500
μA
-
0.02
1
μA
I
GSS
gate leakage current
-
2
100
nA
-
2
100
nA
R
DSon
drain-source on-state
resistance
-
2.7
3.2
m
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
-
3.8
4.8
m
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
-
4.3
5.7
m
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12
; see
Figure 11
-
-
6.7
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
-
125
-
nC
I
D
= 25 A; V
DS
= 32 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
-
71
-
nC
Q
GS
Q
GD
C
iss
C
oss
C
rss
gate-source charge
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
-
23
-
nC
gate-drain charge
-
42
-
nC
input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
-
6016
8020
pF
output capacitance
-
739
870
pF
reverse transfer
capacitance
-
510
700
pF
t
d(on)
t
r
t
d(off)
t
f
L
D
turn-on delay time
V
DS
= 30 V; R
L
= 1.2
; V
GS
= 10 V;
R
G(ext)
= 10
-
40
-
ns
rise time
-
87
-
ns
turn-off delay time
-
224
-
ns
fall time
-
117
-
ns
internal drain
inductance
from upper edge of drain mounting base
to centre of die; T
j
= 25 °C
from source lead to source bond pad;
T
j
= 25 °C
-
3.5
-
nH
L
S
internal source
inductance
-
7.5
-
nH
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