參數(shù)資料
型號: BUK663R2-40C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 100 A, 40 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 2/14頁
文件大?。?/td> 374K
代理商: BUK663R2-40C
BUK663R2-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 14 October 2010
2 of 14
NXP Semiconductors
BUK663R2-40C
N-channel TrenchMOS intermediate level FET
[1]
Continuous current is limited by package.
2.
Pinning information
3.
Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 100 A; V
sup
40 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
368
mJ
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 32 V;
V
GS
= 10 V; see
Figure 13
;
see
Figure 14
-
42
-
nC
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Table 2.
Pin
Pinning information
Symbol
Description
Simplified outline
Graphic symbol
1
G
gate
SOT404 (D2PAK)
2
D
Drain
3
S
source
mb
D
mounting base; connected to
drain
mb
1
3
2
S
D
G
mbb076
Table 3.
Type number
Ordering information
Package
Name
Description
Version
BUK663R2-40C
D2PAK
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
SOT404
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