參數(shù)資料
型號： BUK652R1-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 9/16頁
文件大?。?/td> 386K
代理商： BUK652R1-30C
BUK652R1-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 December 2010
9 of 16
NXP Semiconductors
BUK652R1-30C
N-channel TrenchMOS intermediate level FET
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Drain-source on-state resistance as a function
of drain current; typical values
003aac337
0
1
2
3
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
003aab271
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
1
2
3
V
GS
(V)
max
typ
min
003aae297
0
2.5
5
7.5
10
0
25
50
75
100
I
D
(A)
R
DSon
(m
Ω
)
10.0
4.5
6.0
V
GS
(V) = 3.8
4.0
003aaf017
0
10
20
30
40
0
20
40
60
I
D
(A)
R
DSon
(m
Ω
)
4.5
4.0
10.0
3.6
3.0
3.4
V
GS
(V) = 3.5
3.8
3.2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK652R1-30C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R1-30C127 制造商:NXP Semiconductors 功能描述:
BUK652R3-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power Dissipation , RoHS Compliant: Yes
BUK652R3-40C,127 功能描述:MOSFET N-CHAN 40V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R6-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
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