參數(shù)資料
型號： BUK652R1-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 7/16頁
文件大?。?/td> 386K
代理商： BUK652R1-30C
BUK652R1-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 December 2010
7 of 16
NXP Semiconductors
BUK652R1-30C
N-channel TrenchMOS intermediate level FET
C
iss
C
oss
C
rss
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 19
-
-
-
8188
1327
761
10918 pF
1592
1042
pF
pF
t
d(on)
t
r
t
d(off)
t
f
L
D
V
DS
= 25 V; R
L
= 1
; V
GS
= 10 V;
R
G(ext)
= 10
-
-
-
-
-
43
93
272
142
4.5
-
-
-
-
-
ns
ns
ns
ns
nH
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
from source lead to source bond pad ;
T
j
= 25 °C
L
S
-
7.5
-
nH
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 20
I
S
= 20 A; dI
S
/dt = -100 A/μs; V
GS
= 0 V;
V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
62.7
115
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical
valuesvalues
003aae293
0
20
40
60
0
0.25
0.5
0.75
1
V
DS
(V)
I
D
(A)
3.8
4
4.5
5
10
V
GS
(V) = 3.3
3.4
3.6
003aae294
0
20
40
60
80
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK652R1-30C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R1-30C127 制造商:NXP Semiconductors 功能描述:
BUK652R3-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power Dissipation , RoHS Compliant: Yes
BUK652R3-40C,127 功能描述:MOSFET N-CHAN 40V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R6-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
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