參數(shù)資料
型號(hào)： BUK652R1-30C
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 6/16頁(yè)
文件大?。?/td> 386K
代理商： BUK652R1-30C
BUK652R1-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 December 2010
6 of 16
NXP Semiconductors
BUK652R1-30C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
30
27
27
1.8
-
-
-
2.3
-
-
-
2.8
V
V
V
V
V
GS(th)
gate-source threshold
voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
; see
Figure 12
I
D
= 2.5 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -15 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 14
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 14
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 14
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 15
; see
Figure 13
0.5
-
-
V
-
-
3.3
V
1.1
1.5
2
V
0.8
-
-
V
I
DSS
drain leakage current
-
-
-
-
-
-
-
0.02
-
-
2
2
2
2.02
1
500
500
100
100
100
2.4
μA
μA
μA
nA
nA
nA
m
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
-
11.1
13
m
-
2.65
3.5
m
-
11.4
12
m
-
10
11.7
m
-
2.4
3
m
-
-
4.8
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 45 A; V
DS
= 15 V; V
GS
= 4.5 V;
T
j
= 25 °C; see
Figure 16
; see
Figure 17
I
D
= 25 A; V
DS
= 24 V; V
GS
= 5 V;
see
Figure 17
; see
Figure 18
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 18
; see
Figure 17
-
5.9
-
C
-
95
-
nC
-
-
-
168
29
45
-
-
-
nC
nC
nC
Q
GS
Q
GD
gate-source charge
gate-drain charge
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 17
; see
Figure 18
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK652R1-30C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R1-30C127 制造商:NXP Semiconductors 功能描述:
BUK652R3-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power Dissipation , RoHS Compliant: Yes
BUK652R3-40C,127 功能描述:MOSFET N-CHAN 40V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R6-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
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