參數(shù)資料
型號(hào): BUK6246-75C
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: POWER, FET
封裝: PLASTIC, DPAK, SC-63, 3 PIN
文件頁(yè)數(shù): 4/14頁(yè)
文件大?。?/td> 194K
代理商: BUK6246-75C
BUK6246-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 July 2011
4 of 14
NXP Semiconductors
BUK6246-75C
N-channel TrenchMOS intermediate level FET
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aae880
0
10
20
30
0
50
100
150
200
T
mb
(
°
C)
I
D
(A)
T
mb
(
°
C)
0
200
150
50
100
03aa16
40
80
120
P
der
(%)
0
003aae874
10
-1
1
10
10
2
10
3
10
-1
1
10
10
2
10
3
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100
μ
s
10 ms
100 ms
t
p
=10
μ
s
1 ms
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BUK624R5-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V90ASOT428
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BUK625R0-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V87ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,87A,SOT428
BUK625R0-40C,118 功能描述:MOSFET N-CHAN 40V 90A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube