參數(shù)資料
型號： BUK6211-75C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS FET
中文描述： 74 A, 75 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 7/15頁
文件大小： 211K
代理商： BUK6211-75C
BUK6211-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 28 September 2010
7 of 15
NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= 0 V; V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
50.5
105
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
= 25°C; t
p
= 300
μ
s
Output characteristics: drain current as a
function of drain-source voltage; typical values
T
j
= 25°C; I
D
= 25 A
Fig 7.
Fig 8.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae411
0
20
40
60
80
100
120
g
fs
(S)
0
20
40
60
80
100
I
D
(A)
003aae410
0
20
40
60
80
100
120
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae885
0
25
50
75
100
125
I
D
(A)
0
1
2
3
4
V
DS
(V)
3.8
V
GS
(V) = 4
4.5
5
6
10
3.3
3.2
3.4
3.6
003aae886
0
10
20
30
40
0
2
4
6
8
10
V
GS
(V)
R
DSon
(m
Ω
)
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相關代理商/技術參數(shù)
參數(shù)描述
BUK6211-75C,118 功能描述:MOSFET N-CHAN 75V 74A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6212-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V41ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,41A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,41A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6212-40C,118 功能描述:MOSFET N-CHAN 40V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6212-40C118 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BUK6213-30A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS Intermediate level FET
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