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參數(shù)資料
| 型號(hào)： | BUK107-50DS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPEFT) |
| 中文描述： | 0.7 A, 50 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | BUK107-50DS |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK107-50DS
Fig.2. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.3. Continuous drain current.
I
D
= f(T
amb
); condition: I
I
= 1.5 mA
Fig.4. Typical on-state characteristics, T
j
= 25 C.
I
D
= f(V
DS
); parameter V
IS
; t
p
= 300
μ
s
Fig.5. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25 C = f(T
j
); I
D
= 100 mA; I
I
= 1.5 mA
Fig.6. Typical on-state resistance, T
= 25 C.
R
DS(ON)
= f(V
IS
); conditions: I
D
= 100 mA, t
p
= 300
μ
s
Fig.7. Typical transfer characteristics, T
= 25 C.
I
D
= f(V
IS
); conditions: V
DS
= 10 V, t
p
= 300
μ
s
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
Tamb / C
ID / A
BUK107-50DS
2.0
1.5
1.0
0.5
0
WITHIN THE SHADED REGION
CURRENT LIMITING OCCURS
TYP.
0
2
4
6
8
10
VIS / V
RDS(ON) / mOhm
BUK107-50DS
240
200
160
120
80
40
0
TYP.
0
4
8
12
16
20
24
28
32
VDS / V
ID / A
BUK107-50DS
1.5
1
0.5
0
VIS / V =
5
6
7
8
0
2
4
6
8
10
VIS / V
ID / A
BUK107-50DS
1.5
1
0.5
0
March 1997
4
Rev 1.200
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參數(shù)描述 |
|---|---|
| BUK107-50DST/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 500MA I(D) | SOT-223 |
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| BUK108-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK108-50DL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK108-50DL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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