- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369562 > BUK106-50SP (NXP SEMICONDUCTORS) PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | BUK106-50SP |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| 中文描述： | 160 A BUF OR INV BASED PRPHL DRVR, PZFM5 |
| 封裝： | PLASTIC, SOT-263-01, 5 PIN |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 142K |
| 代理商： | BUK106-50SP |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK106-50L/S
BUK106-50LP/SP
Fig.16. Maximum drain source supply voltage for
SC load protection. V
DDP(P)
= f(V
IS
); T
mb
≤
150 C
Fig.17. Minimum protection supply voltage
for SC load protection. V
PSP
= f(V
IS
); T
mb
≥
25 C
Fig.18. Typical overload protection characteristics.
t
d sc
= f(P
DS
); conditions: V
PS
≥
V
PSP
; V
IS
≥
5 V
Fig.19. Typical overload protection characteristics.
Conditions: V
DD
= 13 V; V
PS
= V
PSN
, V
IS
= 8 V; SC load
Fig.20. Typical overload protection energy, T
= 25 C
E
SC(TO)
= f(V
PS
); conditions: V
DS
= 13 V, parameter V
IS
Fig.21. Typical clamping characteristics, 25 C.
I
D
= f(V
DS
); conditions: R
IS
= 100
; t
p
≤
50
μ
s
0
2
4
6
8
10
VIS / V
VDDP(P) / V
BUK106-50L/S
50
40
30
20
10
0
max
-60
-20
20
60
100
140
180
220
Tmb / C
BUK106-50L/S
1.0
0
Energy / J
Time / ms
Tj(TO)
Energy & Time
0.8
0.6
0.4
0.2
0
2
4
6
8
10
VIS / V
VPSP / V
BUK106-50L/S
10
8
6
4
2
0
min
BUK106-50L
BUK106-50S
0
2
4
6
8
10
VPS / V
ESC(TO) / J
BUK106-50L/S
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
BUK106-50L
BUK106-50S
VIS / V =
10
5
5
10
0.1
1
10
PD / kW
td sc / ms
BUK106-50L/S
10
1
0.1
0.01
PDSM
50
60
70
VDS / V
ID / A
BUK106-50L/S
50
40
30
20
10
0
typ.
February 1993
9
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK107-50DL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK107-50DS | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPEFT) |
| BUK108-50DL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK108-50GL | PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET) |
| BUK108-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK107-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK107-50DL T/R | 功能描述:MOSFET TAPE-7 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK107-50DL,115 | 功能描述:MOSFET TAPE-7 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK107-50DLT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 500MA I(D) | SOT-223 |
| BUK107-50DS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。