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參數(shù)資料
| 型號(hào)： | BUK106-50SP |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| 中文描述： | 160 A BUF OR INV BASED PRPHL DRVR, PZFM5 |
| 封裝： | PLASTIC, SOT-263-01, 5 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 142K |
| 代理商： | BUK106-50SP |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK106-50L/S
BUK106-50LP/SP
Fig.22. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.23. Typical DC protection supply characteristics.
I
PS
= f(V
PS
); normal or overload operation; T
j
= 25 C
Fig.24. Typical latched input characteristics, 25 C.
I
ISL
= f(V
IS
); after overload protection latched
Fig.25. Typical reverse diode current, T
= 25 C.
I
S
= f(V
SDS
); conditions: V
IS
= 0 V; t
p
= 250
μ
s
Fig.26. Normalised limiting clamping energy.
E
DSM
% = f(T
mb
); conditions: I
D
= 27 A
Fig.27. Clamping energy test circuit, R
IS
= 100
.
E
DSM
=
0.5
LI
D
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VIS(TO) / V
2
1
0
max.
typ.
min.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
VSD / V
IS / A
BUK106-50L/S
200
150
100
50
0
0
2
4
6
8
10
12
14
BUK106-50L/S
VPS / V
IPS / mA
1.0
0.5
0
0
20
40
60
80
100
120
140
Tmb / C
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VIS / V
IISL / mA
BUK106-50L/S
100
50
0
4
5
6
7
8
9
VPS / V = 11
150
10
L
D.U.T.
VDD
RI = RIS
R 01
shunt
VDS
-ID/100
+
-
VIS
0
ID
0
VDS
0
VDD
V(CL)DSR
D
S
I
TOPFET
P
F
P
RF
VPS
+
2
V
(
CL
)
DSR
/(
V
(
CL
)
DSR
V
DD
)
February 1993
10
Rev 1.200
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|---|---|
| BUK107-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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| BUK107-50DLT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 500MA I(D) | SOT-223 |
| BUK107-50DS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
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