參數(shù)資料
型號： BUJ303B
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： NPN power transistor
封裝： BUJ303B<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁數(shù)： 3/9頁
文件大?。?/td> 131K
代理商： BUJ303B
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Collector cut-off current
1
I
CES
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
,I
CBO
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CEO
= V
CEOMmax
(400V)
-
-
-
-
1.0
2.0
mA
mA
I
CEO
Collector cut-off current
1
-
-
0.1
mA
I
EBO
V
CEOsust
V
CEsat
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
V
= 9 V; I
= 0 A
I
C
= 300 mA; L = 25 mH
I
C
= 3 A; I
B
= 1 A
I
C
= 1 A; I
B
= 0.2 A
-
-
-
0.1
-
1.5
0.5
mA
V
V
V
400
-
-
0.25
-
V
BEsat
h
FE
Base-emitter saturation voltage
DC current gain
I
C
= 3 A; I
= 1 A
I
C
= 10 mA; V
CE
= 5 V
I
C
= 800 mA; V
CE
= 3 V
I
C
= 3 A; V
CE
= 1.5 V
-
1.0
-
31
1.5
-
40
V
10
23
h
FEsat
DC current gain
-
10.5
-
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con
= 2.5 A; I
Bon
= 0.5 A I
Boff
= -1 A;
V
CC
= 250 V;
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
1
-
-
-
μ
s
μ
s
μ
s
2.5
0.3
Switching times (inductive load)
I
Con
= 2.5 A; I
= 0.5 A; -V
BB
= 5 V;
L
C
= 300
μ
H; L
B
= 1
μ
H; V
CC
= 350 V
t
s
t
f
Turn-off storage time
Turn-off fall time
2
-
-
μ
s
ns
200
Switching times (inductive load)
I
Con
= 2.5 A; I
= 0.5 A; -V
BB
= 5 V;
L
C
= 300
μ
H; L
B
= 1
μ
H; V
CC
= 350 V;
T
j
= 100 C
t
s
t
f
Turn-off storage time
Turn-off fall time
3
-
-
μ
s
ns
300
1
Measured with half sine-wave voltage (curve tracer).
March 2002
2
Rev 1.000
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