參數(shù)資料
型號： BUJ303B
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： NPN power transistor
封裝： BUJ303B<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁數(shù)： 2/9頁
文件大小： 131K
代理商： BUJ303B
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
V
BE
= 0 V
-
-
-
-
-
-
1050
1050
400
5
10
100
1.5
-
-
V
V
V
A
A
W
V
T
mb
≤
25 C
I
C
B
= 1 A
I
C
= 3 A; V
CE
= 1.5 V
I
C
=2.5 A,I
B1
=0.5 A
0.25
10.5
300
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V
BE
= 0 V
-
-
-
-
-
-
-
-
1050
400
1050
5
10
2
4
100
150
150
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
-65
-
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
R
th j-a
Junction to mounting base
-
1.25
K/W
Junction to ambient
in free air
60
-
K/W
1 2 3
tab
b
c
e
March 2002
1
Rev 1.000
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