參數(shù)資料
型號(hào)： BUJ303AD
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor
中文描述： 5 A, 500 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 6/14頁
文件大?。?/td> 189K
代理商： BUJ303AD
BUJ303AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 September 2011
6 of 14
NXP Semiconductors
BUJ303AD
NPN power transistor
6.
Characteristics
[1]
Measured with half-sine wave voltage (curve tracer).
Table 6.
Symbol
Static characteristics
I
CES
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter cut-off
current
V
BE
= 0 V; V
CE
= 1000 V; T
mb
= 25 °C
V
BE
= 0 V; V
CE
= 1000 V; T
j
= 125 °C
V
CB
= 1000 V; I
E
= 0 A; T
mb
= 25 °C
[1]
-
-
-
-
1
2
1
mA
mA
mA
[1]
-
I
CBO
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
collector-emitter
sustaining voltage
collector-emitter
saturation voltage
base-emitter saturation
voltage
DC current gain
[1]
-
I
CEO
V
CE
= 500 V; I
B
= 0 A; T
mb
= 25 °C
[1]
-
-
0.1
mA
I
EBO
V
EB
= 9 V; I
C
= 0 A; T
mb
= 25 °C
-
-
0.1
mA
V
CEOsus
I
B
= 0 A; I
C
= 100 mA; L
C
= 25 mH;
T
mb
= 25 °C; see
Figure 6
; see
Figure 7
I
C
= 3 A; I
B
= 0.6 A; T
mb
= 25 °C;
see
Figure 8
; see
Figure 9
I
C
= 3 A; I
B
= 0.6 A; T
mb
= 25 °C;
see
Figure 10
I
C
= 5 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 500 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 2.5 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 3 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
500
-
-
V
V
CEsat
-
0.25
1.5
V
V
BEsat
-
0.97
1.3
V
h
FE
10
22
30
14
25
35
h
FEsat
DC saturation current
gain
10
13.5
17
-
12
-
Dynamic Characteristics (switching times - resistive load)
t
s
turn-off delay time
t
f
fall time
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; V
CC
= 187.5 V; T
mb
= 25 °C;
see
Figure 12
; see
Figure 13
-
-
3.4
0.33
4
0.45
μs
μs
Dynamic Characteristics (switching times - inductive load)
t
s
turn-off delay time
t
s
turn-off delay time
I
C
= 2.5 A; I
Bon
= 0.5 A; V
CC
= 350 V;
V
BB
= -5 V; L
B
= 1 μH; T
mb
= 25 °C;
see
Figure 14
; see
Figure 15
I
C
= 2.5 A; I
Bon
= 0.5 A; V
CC
= 350 V;
V
BB
= -5 V; L
B
= 1 μH; T
j
= 100 °C;
see
Figure 14
; see
Figure 15
-
-
1.4
1.7
1.6
1.9
μs
μs
t
f
fall time
-
-
145
160
160
200
ns
ns
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BUJ303AX 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 5A 500V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 5A, 500V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 5A, 500V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:32W; DC Collector Current:5A; DC Current Gain hFE:22; No. of Pins:3 ;RoHS Compliant: Yes
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