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參數(shù)資料
| 型號： | BUJ100LR |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 中文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 147K |
| 代理商： | BUJ100LR |
BUJ100LR
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
5 of 12
NXP Semiconductors
BUJ100LR
NPN power transistor
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
CES
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter cut-off
current
emitter-base cut-off
current
collector-emitter
sustaining voltage
collector-emitter
saturation voltage
V
BE
= 0 V; V
CE
= 700 V; T
j
= 125 °C
-
-
5
mA
I
EBO
V
EB
= 9 V; I
C
= 0 A; T
lead
= 25 °C
-
-
1
mA
V
CEOsus
I
B
= 0 A; I
C
= 1 mA; L
C
= 25 mH;
T
lead
= 25 °C; see
Figure 4
; see
Figure 5
I
C
= 0.25 A; I
B
= 50 mA; T
lead
= 25 °C;
see
Figure 6
I
C
= 0.5 A; I
B
= 125 mA; T
lead
= 25 °C;
see
Figure 6
I
C
= 0.75 A; I
B
= 250 mA; T
lead
= 25 °C;
see
Figure 6
I
C
= 0.25 A; I
B
= 50 mA; T
lead
= 25 °C;
see
Figure 7
I
C
= 0.5 A; I
B
= 125 mA; T
lead
= 25 °C;
see
Figure 7
I
C
= 0.5 mA; V
CE
= 2 V; T
lead
= 25 °C
I
C
= 0.4 A; V
CE
= 5 V; T
lead
= 25 °C;
see
Figure 8
; see
Figure 9
I
C
= 0.8 A; V
CE
= 5 V; T
lead
= 25 °C;
see
Figure 8
; see
Figure 9
400
-
-
V
V
CEsat
-
0.2
0.5
V
-
0.3
1
V
-
0.4
1.5
V
V
BEsat
base-emitter saturation
voltage
-
-
1
V
-
-
1.2
V
h
FE
DC current gain
12
10
-
-
-
30
5
7.5
20
Dynamic characteristics
t
f
fall time
I
C
= 1 A; I
Bon
= 200 mA; V
BB
= -5 V;
L
B
= 1 μH; T
lead
= 25 °C; inductive load;
see
Figure 10
; see
Figure 11
-
80
-
ns
Fig 4.
Test circuit for collector-emitter sustaining
voltage
Fig 5.
Oscilloscope display for collector-emitter
sustaining voltage test waveform
001aab987
horizontal
1
Ω
300
Ω
6 V
vertical
oscilloscope
50 V
100
Ω
to 200
Ω
30 Hz to 60 Hz
001aab988
V
CE
(V)
min
V
CEOsus
I
C
(mA)
10
100
250
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUJ100LR,126 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 1A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ100LR,412 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 1A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ100LR126 | 制造商:NXP Semiconductors 功能描述:NPN POWER TRANSISTOR 400 V 1 A 3-TO-9 |
| BUJ101A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ101AU | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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