參數(shù)資料
型號(hào): BUH1215
廠商: 意法半導(dǎo)體
英文描述: High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關(guān)NPN功率晶體管)
中文描述: 高壓快速NPN電源開關(guān)晶體管(高電壓快速開關(guān)npn型功率晶體管)
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 200K
代理商: BUH1215
Reverse Biased SOA
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
o
C (line scan phase). On the other hand,
negative base current I
B2
must be provided the
transistor to turn off (retrace phase).
Most of the dissipation, especially in the
deflection application, occurs at switch-off so it is
essential to determine the value of I
B2
which
minimizes power losses, fall time t
f
and,
consequently, T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B1
at 64 KHz scanning frequencies for
choosing the optimum negative drive. The test
circuit is illustrated in figure 1.
The values of L and C are calculated from the
following equations:
1
2 L
(
I
C
)
2
=
1
1
L
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
2 C
(
V
CEfly
)
2
ω
=
2
π
f
=
BASE DRIVE INFORMATION
BUH1215
4/7
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