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參數(shù)資料
| 型號(hào)： | BU508DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | BU508DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
7
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU508DW | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU508DX | Silicon Diffused Power Transistor |
| BU522 | TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 7A I(C) | TO-220AB |
| BU522A | TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| BU536 | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 4A I(C) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU508DF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU508DF/B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU508DF_12 | 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON DIFFUSED POWER TRANSISTOR |
| BU508DFI | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 NPN General Purpose RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| BU508DR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218VAR |
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