參數(shù)資料
型號: BU508DF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 8 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 5/7頁
文件大?。?/td> 55K
代理商: BU508DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DF
Fig.9. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.10. Forward bias safe operating area. T
hs
= 25C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30
±
5 newton force on the centre of
the envelope.
Fig.11. Forward bias safe operating area. T
hs
= 25C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30
±
5 newton force on the centre of
the envelope.
1.0E-05
1E-03
1.0E-01
1.0E+1
0.1.0E-07
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
bu508ax
t / s
Zth K/W
D =
t
p
t
p
T
T
P
D
t
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
July 1998
5
Rev 1.200
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